New FIAP Fellows

Please join us in congratulating the newly elected APS Fellows nominated by FIAP, also listed at this link: http://www.aps.org/units/fiap/fellowship/index.cfm

Akinwande, Deji
University of Texas at Austin
Citation: For contributions to the physical study and development of scalable uniform monolayer graphene synthesis on wafer-scale substrates, and the realization of GHz flexible and wearable two-dimensional devices, circuits and systems.

Bauer, Matthias
Applied Materials
Citation: For contributions to low temperature epitaxy of group IV alloys, in situ-doping with degenerate doping levels, highly strained alloys and novel techniques to achieve selectivity such as cyclic deposition and etch.

Gnade, Bruce E
Southern Methodist University
Citation: For contributions to the development of electronic materials and device technologies that span microelectronics, display technologies, and large area sensors.

Gutierrez, Carlos J
Sandia National Laboratories
Citation: For contributions to the understanding of magnetic thin film physics, the development of innovative materials physics education programs, and for research and development leadership in transitioning fundamental materials understanding into a broad range of energy and other national security applications.

Ma, Zhenqiang
University of Wisconsin – Madison
Citation: For seminal contribution to the development of flexible high speed devices, microwave device technology, optoelectronics, and the innovation in the area of biodegradable environmentally benign devices.

Oden, Patrick I
Texas Instruments
Citation: For contributions to the commercial success of digital micromirror micro-electro-mechanical systems-based displays through co-invention of a highly flexible and scalable pixel architecture based on a new understanding of mirror dynamics, shape, and force interactions via novel integration of metrology techniques.

Talin, Albert A
Sandia National Laboratories
Citation: For the discovery of new electronic transport phenomena, materials, and devices.

Zhang, Yong
University of North Carolina – Charlotte
Citation: For outstanding contributions to the fundamental understanding, characterization, and applications of semiconductor hetero-structures and isoelectronic impurities in semiconductors.

Opinions expressed represent the views of the individual authors and not the American Physical Society or author’s employers.