27th International Conference on the Physics of Semiconductors: Tutorials

Flagstaff, AZ
25-30 July 2004

Tutorial Organizer: Brian J. Skromme, Arizona State University
Tutorial Coordinator: Harland Tompkins, Consultant, Chandler, Arizona

Tutorial Session 1: Epitaxial Growth

Molecular Beam Epitaxy
Klaus Ploog, Paul Drude Institut, Germany

Semiconductor Nanostructures: Fabrication and Properties of Self-Assembled Quantum Dots
Gerhard Abstreiter, Walter Schottky Institute, Technische Universität of München, Germany

CVD Deposition of Group-III Nitride Materials
M. Asif Khan, University of South Carolina

SiGe CVD, Fundamentals and Device Applications
Derek Houghton, Aixtron, Inc.

Tutorial Session 2: Characterization of Semiconductors and Heterostructures

Luminescence and Related Spectroscopies of Semiconductors and Heterostructures
Michael Thewalt, Simon Fraser University, Canada

Spectroscopic Ellipsometry: What It Is, What It Will Do, and What It Won’t Do
Harland Tompkins, Chandler, Arizona

Characterization of Semiconductor Hetero- and Nanostructures by X-ray Scattering
Václav Holý, Charles University, Czech Republic

Transmission Electron Microscopy of Semiconductors and Heterostructures
D. Cherns, University of Bristol, United Kingdom

Tutorial Session 3: Semiconductor Device Physics and Quantum Computing

Physics Challenges Facing the Semiconductor Industry
Alain Diebold, International SEMATECH

SiGe(C) MOSFET Technology
Sanjay Banerjee, University of Texas at Austin

Semiconductor Devices for Quantum Computing
Bruce Kane, University of Maryland

Novel Physics of Nitride Devices
Michael Shur, Rensselaer Polytechnic Institute

Invited Device Physics Talk

Physics of Advanced CMOS VLSI
Dennis Buss, Texas Instruments, Inc.

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