APS March Meeting 2005: Selected Invited Talks

FIAP is pleased to make available invited presentations from these FIAP-sponsored Symposia at the 2005 Los Angeles March Meeting:

Session D5: The Grand Challenge of Hydrogen Storage
Chairs: Sunita Satyapal, DOE and Frederick E. Pinkerton, General Motors R&D Center

D5.1 – Energetics of Hydrogen Storage Reactions: The Power of DFT
Jan F. Herbst, GM R&D Center

D5.2 – Novel Nanostructured Materials for Hydrogen Storage
Anne Dillon, National Renewable Energy Laboratory

D5.4 – Destabilization of Light Element Hydrides with High Hydrogen Capacities: Metal Imides/Nitrides
Weifang Luo, Sandia National Laboratory

D5.5 – Controlled Hydrogen Release from Ammonia Borane using Mesoporous Scaffolds
Tom Autrey, Pacific Northwest National Laboratory

Session P14: Hydrogen Storage Focus Session 1
Chair: Frederick E. Pinkerton, General Motors R&D Center

P14.1 – A Variety of Metal-N-H Systems for Hydrogen Storage
Ping Chen, National University of Singapore

Session L5: Emerging Devices and Materials for the Microelectronics Industry
Chair: Alex Demkov, University of Texas, Austin

The Symposium goal was to attract attention to many opportunities for physicists to contribute to overcoming the challenges associated with the commercialization of emerging research devices and materials for nanoelectronic and optoelectronics applications (www.itrs.net). Though rarely looked upon in this manner, robust industrial R&D is the bedrock of any healthy discipline such as physics. The present state of the semiconductor industry presents a golden opportunity for increased engagement by physicists. By shrinking the sizes of devices, semiconductor manufacturers have been successful in decreasing for each technology node the cost per functional throughput per unit area or unit volume. However, as devices continue to shrink, variations in device to device performance increase, leakage currents increase, and error rates increase. The second law of thermodynamics means that additional heat will be transferred with the errors and that entropy will increase. The heat dissipation may become a major bottleneck to sustain the CMOS platform and to add emerging research devices on this platform. The challenges for physicists are to suggest strategies in managing heat and in designing advanced devices for high performance systems. The invited speakers in this session discussed the critical needs of the semiconductor industry for the improved understanding and manufacturing of selected emerging research devices and materials, and emphasized the importance of synergy between synthesis, characterization, modeling and simulations.

A.A. Demkov and H.S. Bennett

L5.1 – The Search for New Information Processing Technologies
Ralph K. Cavin, Semiconductor Research Corporation

L5.2 – Physics of Modern VLSI CMOS
Dennis Buss, Texas Instruments, Inc.

L5.3 – Challenges for Materials to Support Emerging Research Devices
Michael Garner, Intel Corporation

L5.4 – Novel Materials for Organic and Thin Film Electronics
Rudolf Tromp, IBM T. J. Watson Research Center

L5.5 – nanoHUB.org – Towards On-line Simulation for Materials and Nanodevices by Design
Gerhard Klimeck and Mark Lundstrom, Purdue University

Session N5: Applications of THz Radiation
Chairs: Alan Todd, Advanced Energy Systems and Gwen P. Williams, Jefferson Lab

N5.1 – Characteristics and Applications of High Intensity Coherent THz Pulses from Linear Accelerators
G. Lawrence Carr, Brookhaven National Laboratory

N5.2 – Submillimeter Wave Spectroscopy of Biological Macromolecules
Tatiana Globus, University of Virginia

N5.3 – Homeland Security, Medical, Pharmaceutical, and Non-Destructive Testing Applications of Terahertz Radiation
Colin Baker and Michael Kemp, TeraView, Ltd.

N5.5 – Terahertz Imaging and Security Applications
Erich Grossman, National Institute of Standards and Technology

Note: The original presentations may have been modified for presentation in this format.